型号:

CSD16321Q5C

RoHS:
制造商:Texas Instruments描述:MOSFET N-CH 25V 100A 8SON
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
CSD16321Q5C PDF
产品培训模块 NexFET MOSFET Technology
视频文件 NexFET Power Block
PowerStack? Packaging Technology Overview
产品目录绘图 CSD164 Series N-Channel Pkg
特色产品 DualCool? NexFET? CSD16 Q5C MOSFETs
标准包装 2,500
系列 NexFET™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 25V
电流 - 连续漏极(Id) @ 25° C 100A
开态Rds(最大)@ Id, Vgs @ 25° C 2.4 毫欧 @ 25A,8V
Id 时的 Vgs(th)(最大) 1.4V @ 250µA
闸电荷(Qg) @ Vgs 19nC @ 4.5V
输入电容 (Ciss) @ Vds 3100pF @ 12.5V
功率 - 最大 3.1W
安装类型 表面贴装
封装/外壳 8-TDFN 裸露焊盘
供应商设备封装 8-SON-EP(5x6)
包装 带卷 (TR)
产品目录页面 1623 (CN2011-ZH PDF)
其它名称 296-25643-2
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